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BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS s BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. 3 The complementary PNP types are BD534, 2 1 BD536, and BD538 respectively. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN BD533 BD535 BD537 PNP BD534 BD536 BD538 V CBO Collector-Base Voltage (IE = 0) 45 60 80 V V CES Collector-Emitter Voltage (V BE = 0) 45 60 80 V V CEO Collector-Emitter Voltage (I B = 0) 45 60 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V I C, I E Collector and Emitter Current 8 A IB Base Current 1 A P t ot Total Dissipation at T c 25 C o 50 W o T stg Storage Temperature -65 to 150 C o Tj Max. O perating Junction Temperature 150 C For PNP types voltage and current values are negative. June 1997 1/4 BD533/BD534/BD535/BD536/BD537/BD538 THERMAL DATA o R t hj-ca se Thermal Resistance Junction-case Max 2.5 C/W o R t hj- amb Thermal Resistance Junction-ambient Max 70